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MJE243

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

ComplementarySiliconPowerPlasticTransistors ...designedforlowpoweraudioamplifierandlow–current,high–speedswitchingapplications. •HighCollector–EmitterSustainingVoltage— VCEO(sus)=100Vdc(Min)—MJE243,MJE253 •HighDCCurrentGain@IC=200mAdc

MotorolaMotorola, Inc

摩托罗拉

Motorola

MJE243

POWER TRANSISTORS COMPLEMENTARY SILICON

Thesedevicesaredesignedforlowpoweraudioamplifierandlow−current,high−speedswitchingapplications. Features •HighCollector−EmitterSustainingVoltage− VCEO(sus)=100Vdc(Min) •HighDCCurrentGain@IC=200mAdc hFE=40−200

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MJE243

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION Thecentralsemiconductormje240,mje250seriestypesarecomplementarysiliconpowertransistorsdesignedforaudioamplifierandswitchingapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central

MJE243

isc Silicon NPN Power Transistor

DESCRIPTION •Collector–EmitterSustainingVoltage- :VCEO(SUS)=100V(Min) •DCCurrentGain- :hFE=40(Min)@IC=0.2A •LowCollectorSaturationVoltage- :VCE(sat)=0.3V(Max.)@IC=0.5A •ComplementtoTypeMJE253 APPLICATIONS •Designedforlowpoweraudioampli

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

MJE243

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARYSILICONPOWERTRANSISTORS JEDECTO-126CASE MJE240,MJE250seriestypesarecomplementarysiliconpowertransistorsdesignedforaudioamplifierandswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

MJE243

Silicon NPN transistor in a TO-126 Plastic Package.

Descriptions SiliconNPNtransistorinaTO-126PlasticPackage. Features HighVCEO,LargeDCcurrent,highfT,lowVCE(sat). Applications Lowpoweraudioamplifier,highspeedswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

MJE243

NPN EPITAXIAL SILICON POWER TRANSISTOR

NPNEPITAXIALSILICONPOWERTRANSISTOR ComplementaryMJE253 DesignedforLowPowerAudioAmplifierandLow-Current,High-SpeedSwitchingApplications

CDIL

CDIL

CDIL

MJE243

COMPLEMENTARY SILICON POWER TRANSITORS

CentralCentral Semiconductor Corp

美国中央半导体

Central

MJE243

Complementary Silicon Power Plastic Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MJE243

Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MJE243_06

Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MJE243_09

Complementary Silicon Power Plastic Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MJE243G

Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MJE243G

Complementary Silicon Power Plastic Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MJE243G

Complementary Silicon Power Plastic Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MJE243G_14

Complementary Silicon Power Plastic Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MJE243G

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-225AA,TO-126-3 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 100V 4A TO126

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

243JE

CarbonCompositionMoldedOD/OFSeries(5Tol.)OASeries(10)

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

243NQ

Lowforwardvoltagedrop

SMCSintered Metal Company

烧结金属烧结金属公司

SMC

243NQ

SCHOTTKYRECTIFIER

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

晶体管资料

  • 型号:

    MJE243

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    低频或音频放大 (LF)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    100V

  • 最大电流允许值:

    4A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BD243D,BD591,BD601,3DA99C,

  • 最大耗散功率:

    15W

  • 放大倍数:

  • 图片代号:

    B-21

  • vtest:

    100

  • htest:

    999900

  • atest:

    4

  • wtest:

    15

详细参数

  • 型号:

    MJE243

  • 功能描述:

    两极晶体管 - BJT 4A 100V 15W NPN

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
ON
23+
TO-126
18000
询价
MOTO
99
三极管
5000
公司存货
询价
MOTO
99
125
特价热销现货库存100%原装正品欢迎来电订购!
询价
MOT
2017+
TO126
54785
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
ON
2020+
TO-126
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ISC
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
MOT
1815+
TO126
6528
只做原装正品现货!或订货,假一赔十!
询价
ON
23+
TO-126
8650
受权代理!全新原装现货特价热卖!
询价
23+
N/A
46180
正品授权货源可靠
询价
ON
2020+
TO-126
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
更多MJE243供应商 更新时间2024-4-26 17:22:00