AUTOMOTIVE MOSFET HEXFET짰 Power MOSFET

Description This Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this MOSFET are a 175°C junction operating temperature, fast switching speed and improved ruggedness in single

文件：148.17 Kbytes 页数：10 Pages

IRF

Advanced Process Technology

文件：205.2 Kbytes 页数：10 Pages

IRF

Advanced Process Technology

文件：205.2 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

文件：124.86 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET Transistor

• DESCRIPTION • Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. • FEATURES • Static drain-source on-resistance: RDS(on) ≤4.0mΩ • Enhancement mode • Fast Switching

文件：339.15 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET-R Power MOSFET

Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

文件：134.4 Kbytes 页数：10 Pages

IRF