Avalanche Energy Rated N-Channel Power MOSFETs

Avalanche Energy Rated N-Channel Power MOSFETs The IRF240R, IRF241R, IRF242R and IRF243R are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel enhancement-mode silicon-gate power field

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Single-Channel, Quad-Band GSM Power Controller in micro SMD

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NSC

国半

NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS

. . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 40 (Min) @ IC = 200 mAdc = 15 (Min) @ IC =

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MOTOROLA

摩托罗拉

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc

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MOTOROLA

摩托罗拉