IRF260

N-Channel Power MOSFET

IRFB260

PowerMOSFET(Vdss=200V,Rds(on)max=0.040ohm,Id=56A)

SMPSMOSFET VDSSRDS(on)maxID 200V0.040Ω56A Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) FullyCharacterizedAvalancheVoltageandCurrent

IRFB260N

PowerMOSFET(Vdss=200V,Rds(on)max=0.040ohm,Id=56A)

SMPSMOSFET VDSSRDS(on)maxID 200V0.040Ω56A Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) FullyCharacterizedAvalancheVoltageandCurrent

IRFB260N

N-ChannelMOSFETTransistor

IRFB260NPBF

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

IRFB260NPBF

HighfrequencyDC-DCconverters

IRFI260

TRANSISTORN-CHANNEL(Vdss=200V,Rds(on)=0.060ohm,Id=45A*)

200Volt,0.060Ω,HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishedadvan

IRFI260

SimpleDriveRequirements

IRFM260

TRANSISTORN-CHANNEL(BVdss=200V,Rds(on)=0.060ohm,Id=35A*)

HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewellestablishedadvantagesofMOSFETs

IRFM260

SimpleDriveRequirements