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IRF254

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert

IXYS

IXYS Corporation

IRF254

Nanosecond Switching Speed

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF254

Avalanche-Energy-Rated N-Channel Power MOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRFM254

PulsewidthlimitedbyMaximumJunctionTemperature

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRFP254

PowerMOSFET(Vdss=250V,Rds(on)=0.14ohm,Id=23A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastS

IRF

International Rectifier

IRFP254

StandardPowerMOSFET-N-ChannelEnhancementMode

StandardPowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackage JEDECTO-247AD •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Highcommutatingdv/dtrating •Fastswitchingtimes Applications •Switch-modeandresonant-mode po

IXYS

IXYS Corporation

IRFP254

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert

IXYS

IXYS Corporation

IRFP254

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半导体

IRFP254

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFP254

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=23A@TC=25℃ •DrainSourceVoltage- :VDSS=250V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.14Ω(Max) •FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
IR
24+
TO-3
10000
询价
IR
2015+
TO-3(铁帽)
19889
一级代理原装现货,特价热卖!
询价
IXYS
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
22+
TO-3
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-3
52746
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
IR
23+
TO-3
8000
专注配单,只做原装进口现货
询价
IR
23+
TO-3
8000
专注配单,只做原装进口现货
询价
IR
23+
TO-3
7000
询价
FAIR
23+
TO-3P
65480
询价
FAIR
2023+环保现货
标准封装
2500
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
更多IRF254供应商 更新时间2025-7-23 16:30:00