N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High voltage)

文件：215.26 Kbytes 页数：5 Pages

Samsung

三星

30A, 200V, 0.085 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulators, switching converters, motor

文件：57.99 Kbytes 页数：7 Pages

Intersil

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert

文件：49.56 Kbytes 页数：1 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supplies ·

文件：323.35 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNE POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

文件：136.22 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Power MOSFET

DESCRIPTION The Nell IRF250 is a three-terminal silicon device with current conduction capability of 30A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode po

文件：435.69 Kbytes 页数：7 Pages

NELLSEMI

尼尔半导体

N-CHANNEL POWER MOSFET

文件：22.05 Kbytes 页数：2 Pages

SEME-LAB

50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED

文件：84.86 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

30A, 200V, 0.085 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulators, switching converters, motor d • 30A, 200V\n• rDS(ON) = 0.085Ω\n• Single Pulse Avalanche Energy Rated\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance\n• Related Literature\n   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”;

Renesas

瑞萨

MOSFETs and JFETs

TT Electronics