IRF250中文资料30A, 200V, 0.085 Ohm, N-Channel Power MOSFET数据手册Renesas规格书
IRF250规格书详情
描述 Description
This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Formerly developmental type TA09295.
特性 Features
• 30A, 200V
• rDS(ON) = 0.085Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
技术参数
- 型号：
IRF250
- 制造商：
International Rectifier
- 功能描述：
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3
- 功能描述：
TRANS MOSFET N-CH 200V 30A 2PIN TO-204AA - Bulk
- 功能描述：
MOSFET N TO-3
- 功能描述：
MOSFET, N, TO-3
- 功能描述：
N CH MOSFET, 200V, 30A, TO-204AE; Transistor
- Polarity：
N Channel; Continuous Drain Current
- Id：
30A; Drain Source Voltage
- Vds：
200V; On Resistance
- Rds(on)：
85mohm; Rds(on) Test Voltage
- Vgs：
10V; Threshold Voltage Vgs
- Typ：
4V; No. of
- Pins：
2 ;RoHS
- Compliant：
No
- 制造商：
TT Electronics/Semelab
- 功能描述：
MOSFET N-Channel 200V 30A TO-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IRF250 |
2 |
2 |
询价 | ||||
IR |
24+ |
原厂封装 |
5000 |
原装现货假一罚十 |
询价 | ||
IR |
24+ |
TO3P |
8712 |
郑重承诺只做原装进口现货 |
询价 | ||
IR |
24+ |
TO-3 |
5000 |
全新原装正品,现货销售 |
询价 | ||
IR |
24+ |
TO-3 |
5000 |
十年沉淀唯有原装 |
询价 | ||
INFINE0N |
21+ |
TO-247 |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR |
2023+ |
3000 |
进口原装现货 |
询价 | |||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 | ||
Infineon/英飞凌 |
24+ |
TO-247AC |
25000 |
原装正品,假一赔十! |
询价 |
