IRF250数据手册Renesas中文资料规格书
IRF250规格书详情
描述 Description
This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Formerly developmental type TA09295.
特性 Features
• 30A, 200V
• rDS(ON) = 0.085Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
技术参数
- 型号：
IRF250
- 制造商：
International Rectifier
- 功能描述：
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3
- 功能描述：
TRANS MOSFET N-CH 200V 30A 2PIN TO-204AA - Bulk
- 功能描述：
MOSFET N TO-3
- 功能描述：
MOSFET, N, TO-3
- 功能描述：
N CH MOSFET, 200V, 30A, TO-204AE; Transistor
- Polarity：
N Channel; Continuous Drain Current
- Id：
30A; Drain Source Voltage
- Vds：
200V; On Resistance
- Rds(on)：
85mohm; Rds(on) Test Voltage
- Vgs：
10V; Threshold Voltage Vgs
- Typ：
4V; No. of
- Pins：
2 ;RoHS
- Compliant：
No
- 制造商：
TT Electronics/Semelab
- 功能描述：
MOSFET N-Channel 200V 30A TO-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO-3 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
IR |
18+ |
TO-247 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
IR |
22+23+ |
TO-3 |
8000 |
新到现货，只做原装进口 |
询价 | ||
IR |
24+ |
TO-3 |
5000 |
全新原装正品,现货销售 |
询价 | ||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 | ||
IR |
22+ |
TO-3 |
12000 |
只做原装、原厂优势渠道、假一赔十 |
询价 | ||
IR |
24+ |
TO-39 |
27500 |
原装正品,价格最低! |
询价 | ||
IR |
22+ |
TO-220 |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
Infineon/英飞凌 |
21+ |
TO-247AC |
6820 |
只做原装,质量保证 |
询价 | ||
IR |
24+ |
TO-3 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 |
