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IRF250

N-CHANNEL POWER MOSFETS

ONSEMI

安森美半导体

IRF2505

N-Channel Power MOSFET

DESCRIPTION The Nell IRF250 is a three-terminal silicon device with current conduction capability of 30A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode po

文件:435.69 Kbytes 页数:7 Pages

NELLSEMI

尼尔半导体

IRF2505

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

文件:137.76 Kbytes 页数:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF2505

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert

文件:49.56 Kbytes 页数:1 Pages

IXYS

艾赛斯

IRF2505

30A, 200V, 0.085 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulators, switching converters, motor

文件:57.99 Kbytes 页数:7 Pages

Intersil

IRF2505

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High voltage)

文件:215.26 Kbytes 页数:5 Pages

Samsung

三星

IRF250SMD

N.CHANNEL POWER MOSFET

FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • HIGH PACKING DENSITIES

文件:23.67 Kbytes 页数:2 Pages

SEME-LAB

IRF2505

N-CHANNEL POWER MOSFET

文件:22.05 Kbytes 页数:2 Pages

SEME-LAB

IRF2505

50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED

文件:84.86 Kbytes 页数:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF250P224

N-Channel MOSFET Transistor

文件:335.12 Kbytes 页数:2 Pages

ISC

无锡固电

技术参数

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    150000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±20V

  • Maximum Drain Source Voltage:

    200V

  • Maximum Continuous Drain Current:

    30A

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
IR
24+
TO-3
7200
绝对原装现货,价格低,欢迎询购!
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
24+
TO3P
8712
郑重承诺只做原装进口现货
询价
IR
2430+
CAN
8540
只做原装正品假一赔十为客户做到零风险!!
询价
IR
24+
原厂封装
5000
原装现货假一罚十
询价
IR
2015+
TO-3(铁帽)
19889
一级代理原装现货,特价热卖!
询价
IR
16+
NA
8800
原装现货,货真价优
询价
IR
25+
TO-3
640
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
MOT
23+
铁剂
5000
原装正品,假一罚十
询价
IR
24+
铁帽
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
更多IRF250供应商 更新时间2025-12-1 15:48:00