| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF250 | N-CHANNEL POWER MOSFETS | ONSEMI 安森美半导体 | ONSEMI | |
N-Channel Power MOSFET DESCRIPTION The Nell IRF250 is a three-terminal silicon device with current conduction capability of 30A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode po 文件:435.69 Kbytes 页数:7 Pages | NELLSEMI 尼尔半导体 | NELLSEMI | ||
N-CHANNEL POWER MOSFETS FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v 文件:137.76 Kbytes 页数:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert 文件:49.56 Kbytes 页数:1 Pages | IXYS 艾赛斯 | IXYS | ||
30A, 200V, 0.085 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulators, switching converters, motor 文件:57.99 Kbytes 页数:7 Pages | Intersil | Intersil | ||
N-CHANNEL POWER MOSFETS FEATURES • Low Rds(on) • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High voltage) 文件:215.26 Kbytes 页数:5 Pages | Samsung 三星 | Samsung | ||
N.CHANNEL POWER MOSFET FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • HIGH PACKING DENSITIES 文件:23.67 Kbytes 页数:2 Pages | SEME-LAB | SEME-LAB | ||
N-CHANNEL POWER MOSFET 文件:22.05 Kbytes 页数:2 Pages | SEME-LAB | SEME-LAB | ||
50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED 文件:84.86 Kbytes 页数:2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
N-Channel MOSFET Transistor 文件:335.12 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC |
技术参数
- Minimum Operating Temperature:
-55°C
- Maximum Power Dissipation:
150000mW
- Maximum Operating Temperature:
150°C
- Maximum Gate Source Voltage:
±20V
- Maximum Drain Source Voltage:
200V
- Maximum Continuous Drain Current:
30A
- Configuration:
Single
- Channel Type:
N
- Channel Mode:
Enhancement
- Category:
Power MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-3 |
7200 |
绝对原装现货,价格低,欢迎询购! |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR |
24+ |
TO3P |
8712 |
郑重承诺只做原装进口现货 |
询价 | ||
IR |
2430+ |
CAN |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
IR |
24+ |
原厂封装 |
5000 |
原装现货假一罚十 |
询价 | ||
IR |
2015+ |
TO-3(铁帽) |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
16+ |
NA |
8800 |
原装现货,货真价优 |
询价 | ||
IR |
25+ |
TO-3 |
640 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
MOT |
23+ |
铁剂 |
5000 |
原装正品,假一罚十 |
询价 | ||
IR |
24+ |
铁帽 |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 |
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