IRF2505

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert

IRF2505

N-Channel Power MOSFET

DESCRIPTION TheNellIRF250isathree-terminalsilicondevicewithcurrentconductioncapabilityof30A,fastswitchingspeed,lowon-stateresistance,breakdownvoltageratingof200V,andmax.thresholdvoltageof4volts. Theyaredesignedforuseinapplicationssuchasswitchedmodepo

IRF2505

N-CHANNEL POWER MOSFETS

FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv

IRF2505

30A, 200V, 0.085 Ohm, N-Channel Power MOSFET

ThisN-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseMOSFETsaredesignedforapplicationssuchasswitchingregulators,switchingconverters,motor

IRF2505

N-CHANNEL POWER MOSFETS

FEATURES •LowRds(on) •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highvoltage)

IRF2505

N-CHANNEL POWER MOSFET

IRF2505

50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED