14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

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Intersil

Static Drain-Source On-Resistance

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ISC

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14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs

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Trans MOSFET N-CH 250V 14A 3-Pin(2+Tab) TO-3

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