HEXFET Power MOSFET

VDSS = 40V RDS(on) = 2.0mΩ
ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

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IRF

Advanced Process Technology

文件：285.49 Kbytes 页数：13 Pages

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件：771.44 Kbytes 页数：12 Pages

IRF

40V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-262 封装

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size ;

Infineon

英飞凌