Single-Channel, Quad-Band GSM Power Controller in micro SMD

文件：885.11 Kbytes 页数：13 Pages

NSC

国半

Package：8-TFBGA，DSBGA；包装：带 类别：RF/IF，射频/中频和 RFID RF 功率控制器 IC 描述：IC RF PWR CNTRL QUAD 2GHZ 8DSBGA

TI

德州仪器

NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS

. . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 40 (Min) @ IC = 200 mAdc = 15 (Min) @ IC =

文件：209.75 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc

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MOTOROLA

摩托罗拉

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain: hFE = 3000 Typ @ IC = 4A • Collector–Emitter Sustainin

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NTE