MJD243

NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS

...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage—VCEO(sus)=100Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE=40(Min)@IC=200mAdc =15(Min)@IC=

MJD243

Complementary Silicon Plastic Power Transistor

ComplementarySiliconPlasticPowerTransistor DPAK−3forSurfaceMountApplications Designedforlowvoltage,low−power,high−gainaudioamplifierapplications. Features •Collector−EmitterSustainingVoltage− VCEO(sus)=100Vdc(Min)@IC =10mAdc •HighDCCur

MJD243

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=0.3V(Max)@IC=0.5A APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

MJD243

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=0.3V(Max)@IC=0.5A APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

MJD243

Silicon NPN transistor in a TO-252 Plastic Package

Descriptions SiliconNPNtransistorinaTO-252PlasticPackage. Features LowCollector−EmitterSaturationVoltage,HighCurrent−Gain. Applications Lowpoweraudioamplifier,Lowcurrent,highspeedswitchingapplications.

MJD243

isc Silicon NPN Power Transistor

DESCRIPTION •DCCurrentGain- :hFE=40(Min)@IC=0.2A •LowCollectorSaturationVoltage- :VCE(sat)=0.3V(Max.)@IC=0.5A •ComplementtothePNPMJD253 •MinimumLot-to-Lotvariationsforrobustdeviceperformance andreliableoperation APPLICATIONS •Designedforlowpo

MJD243

Complementary Silicon Plastic Power Transistors

MJD243

Complementary Silicon Plastic Power Transistor

MJD243

Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications

MJD243

Complementary Silicon Plastic Power Transistors