14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：70.67 Kbytes 页数：7 Pages

INTERSIL

Nanosecond Switching Speeds

文件：48.36 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

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NTE

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 16 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 125 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

文件：105.63 Kbytes 页数：5 Pages

POINN

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 16 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 125 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

文件：105.63 Kbytes 页数：5 Pages

POINN