IRF246技术资料参数原装现货无锡固电-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRF246	文件：70.67 Kbytes Page：7 Pages	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件：70.67 Kbytes 页数：7 Pages	INTERSIL	INTERSIL
IRF246	文件：48.36 Kbytes Page：2 Pages	Nanosecond Switching Speeds 文件：48.36 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRFP246	文件：68.75 Kbytes Page：7 Pages	15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件：68.75 Kbytes 页数：7 Pages	INTERSIL	INTERSIL
IRFP246	文件：67.83 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor 文件：67.83 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IT246	文件：126.5 Kbytes Page：4 Pages	Pulse Transformer with Single Secondary Winding 文件：126.5 Kbytes 页数：4 Pages	SCHAFFNER 夏弗纳	SCHAFFNER

更多IRF246供应商更新时间2026-1-18 10:50:00