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IRF2807LPBF

HEXFET Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF2807LPBF

Advanced Process Technology Ultra Low On-Resistance

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRF2807PBF

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRF2807PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF2807S

AdvancedProcessTechnology

Description AdvancedMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,providesthede

KERSEMI

Kersemi Electronic Co., Ltd.

IRF2807S

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF2807S

AdvancedProcessTechnology

IRF

International Rectifier

IRF2807S

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF2807S

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF2807SPBF

AdvancedProcessTechnologyUltraLowOn-Resistance

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

详细参数

  • 型号:

    IRF2807LPBF

  • 制造商:

    International Rectifier

  • 功能描述:

    MOSFET N-Channel 75V 82A TO262

供应商型号品牌批号封装库存备注价格
IR
24+
TO-262
45000
原装正品 特价现货(香港 新加坡 日本)
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
International Rectifier
2022+
1
全新原装 货期两周
询价
IR
1003+
TO-262
1000
普通
询价
IR
2022
TO-262
20000
全新原装现货热卖
询价
IR
21+
TO262
10000
原装现货假一罚十
询价
INFINEON/IR
2023+
TO-262
8635
一级代理优势现货,全新正品直营店
询价
IR
22+
IRF2807L
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-262
8000
专注配单,只做原装进口现货
询价
IR
23+
TO-262
8000
专注配单,只做原装进口现货
询价
更多IRF2807LPBF供应商 更新时间2025-7-23 13:00:00