AUTOMOTIVE MOSFET

VDSS = 75V RDS(on) = 4.5mΩ
ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction op

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AUTOMOTIVE MOSFET

文件：364 Kbytes 页数：12 Pages

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HEXFET Power MOSFET

VDSS = 75V RDS(on) = 4.5mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve

文件：785.48 Kbytes 页数：12 Pages

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Advanced Process Technology

文件：426.18 Kbytes 页数：12 Pages

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