首页 >IRF2907ZSTRLPBF>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF2907ZSTRLPBF | Advanced Process Technology 文件：426.18 Kbytes 页数：12 Pages | IRF | IRF | |
HEXFET Power MOSFET Die in Wafer Form ● 100 Tested at Probe ● Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack** ● Ultra Low On-Resistance 文件：18.66 Kbytes 页数：1 Pages | IRF | IRF | ||
Power MOSFET(Vdss=75V, Rds(on)=4.5mohm, Id=209A?? Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating te 文件：115.6 Kbytes 页数：9 Pages | IRF | IRF | ||
HEXFET Power MOSFET Die in Wafer Form ● 100 Tested at Probe ● Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack** ● Ultra Low On-Resistance 文件：18.66 Kbytes 页数：1 Pages | IRF | IRF |
详细参数
- 型号：
IRF2907ZSTRLPBF
- 功能描述：
MOSFET MOSFT 75V 170A 4.5mOhm 180nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
TO-263-3 |
10049 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
询价 | |||
Infineon Technologies |
21+ |
D2PAK |
3200 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
IR |
2012+ |
D2PAK |
800 |
普通 |
询价 | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
INFINEON/英飞凌 |
2447 |
D2-PAK(TO-263) |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
INFINEON |
25+ |
TO-263 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IR |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 |
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