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HEXFET Power MOSFET

文件：143.01 Kbytes 页数：8 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：237.5 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：197.25 Kbytes 页数：10 Pages

IRF

1.75A Synchronous Step-Down Regulator in 1.6mm × 1mm WLCSP

FEATURES - VOUT Range: 0.5V to 3.65V - 2MHz Switching Frequency - Low Ripple Burst Mode® or Forced Continuous Mode of Operation - High Efficiency: 30mΩ NMOS, 100mΩ PMOS - Peak Current Mode Control - 22ns Minimum On-Time - Wide Bandwidth, Fast Transient Response - Safely Tolerates Inductor

文件：1.4995 Mbytes 页数：16 Pages

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亚德诺

50 WATT ZENER TRANSIENT SUPRESSORS 3.9 TO 2OOVOLTS

50 WATT ZENER TRANSIENT SUPRESSORS 3.9 TO 2OO VOLTS

文件：160.78 Kbytes 页数：3 Pages

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