Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：167.38 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：167.38 Kbytes 页数：11 Pages

IRF

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

文件：92.06 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Fully Avalanche Rated • FEATURES • Static drain-source on-resistance: RDS(on)≤42mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：333.91 Kbytes 页数：2 Pages

ISC

无锡固电