IRFC2907B

HEXFET Power MOSFET Die in Wafer Form

●100TestedatProbe ●AvailableinTapeandReel,ChipPack,SawnonFilmandGelPack** ●UltraLowOn-Resistance

IRFP2907

PowerMOSFET(Vdss=75V,Rds(on)=4.5mohm,Id=209A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingte

IRFP2907

HEXFETPowerMOSFETDieinWaferForm

●100TestedatProbe ●AvailableinTapeandReel,ChipPack,SawnonFilmandGelPack** ●UltraLowOn-Resistance

IRFP2907

IntegratedStarterAlternator

IRFP2907

N-ChannelMOSFETTransistor

IRFP2907PBF

AUTOMOTIVEMOSFET(VDSS=75V,RDS(on)=4.5m廓,ID=209A)

Description ThisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiv

IRFP2907PBF

AdvancedProcessTechnology

IRFP2907Z

AUTOMOTIVEMOSFET

VDSS=75V RDS(on)=4.5mΩ ID=90A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunction

IRFP2907Z

N-ChannelMOSFETTransistor

IRFP2907ZPBF

HEXFETPowerMOSFET

VDSS=75V RDS(on)=4.5mΩ ID=90A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp