1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching c

文件：91.26 Kbytes 页数：7 Pages

Fairchild

仙童半导体

1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching c

文件：52.27 Kbytes 页数：6 Pages

Intersil

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple comb

文件：1.73217 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third g

文件：935 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世

1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs

Description These are advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regul

文件：360.08 Kbytes 页数：6 Pages

HARRIS

Power MOSFET(Vdss=100V, Rds(on)=0.27ohm, Id=1.3A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4-pin DIP package is a low cost machine-insertable case style which can be stacked in multip

文件：176.8 Kbytes 页数：6 Pages

IRF

Power MOSFET

文件：1.83877 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世

1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching con • 1.3A, 100V\n• rDS(ON) = 0.300Ω\n• Single Pulse Avalanche Energy Rated\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance\n• Related Literature\n   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”;

Renesas

瑞萨

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• For automatic insertion;

Vishay

威世

1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET

ONSEMI

安森美半导体