Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third g

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HEXFET Power MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4-pin DIP package is a low cost machine-insertable case style which can be stacked in multip

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IRF

Power MOSFET

文件：1.83877 Mbytes 页数：9 Pages

VishayVishay Siliconix

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Power MOSFET

文件：935 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世