0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS

These are advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching

文件：360.56 Kbytes 页数：6 Pages

HARRIS

(IRFD210 - IRFD213) N Channel Power MOSFETs

Renesas

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RELD EFFECT POWER TRANSISTOR

文件：871.14 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Two-Port Isolated, Low Profile ISOLATED INSTRUMENTATION AMPLIFIER

文件：131.2 Kbytes 页数：13 Pages

BURR-BROWN

Two-Port Isolated, Low Profile ISOLATED INSTRUMENTATION AMPLIFIER

文件：131.2 Kbytes 页数：13 Pages

BURR-BROWN