IRFM350

N-CHANNELPOWERMOSFET

IRFM350

POWERMOSFETTHRU-HOLE(TO-254AA)

PartNumberRDS(on)ID IRFM3500.315Ω14A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransis

IRFM350

SimpleDriveRequirements

IRFN350

POWERMOSFETN-CHANNEL(BVdss=400V,Rds(on)=0.315ohm,Id=14A)

RDS(on)0.315Ω ID14A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establi

IRFN350

SimpleDriveRequirements

IRFP350

16A,400V,0.300Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IRFP350

PowerMOSFET(Vdss=400V,Rds(on)=0.30ohm,Id=16A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels

IRFP350

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●ImprovedInducttiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3Ppackage

IRFP350

PowerMOSFET

IRFP350

iscN-ChannelMOSFETTransistor