0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET

Description This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such

文件：50.28 Kbytes 页数：6 Pages

Intersil

Power MOSFET

VDS (V) 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

文件：1.16878 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene

文件：415.3 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=0.49A)

VDSS = 400V RDS(on) = 1.8Ω ID = 0.49A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca

文件：478.9 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=0.49A)

Infineon

英飞凌

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene

文件：415.3 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

VDS (V) 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

文件：1.16878 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

HEXFET POWER MOSFET ( VDSS=400V , RDS(on)=1.8廓 , ID=0.49A )

VDSS = 400V RDS(on) = 1.8Ω ID = 0.49A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca

文件：937.39 Kbytes 页数：8 Pages

IRF