IRFC9110资料datasheet下载批发供应HARRIS-114ic电子网

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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
IRFD9110	文件：218.22 Kbytes Page：6 Pages	1-WATTRATEDPOWERMOSFETs HEXFETtechnologyisthekeytoInternationalRectififersadvancedlineofpowerMOSFETtransistors. ■P-ChannelVersatility ■ForAutomaticInsertion ■CompactPlasticPackage ■EndStackable ■FastSwitching ■LowDriveCurrent ■EasilyParalleled ■ExcellentTemperatureStability	IRF International Rectifier	IRF
IRFD9110	文件：342.88 Kbytes Page：6 Pages	-0.6Aand-0.7A,-80Vand-100V,1.2and1.6Ohm,P-ChannelPowerMOSFETs Description TheseareP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. Features •-0.6Aand-07A,-80Vand-100V •rDS(ON)=	HARRIS Harris Corporation	HARRIS
IRFD9110	文件：93.95 Kbytes Page：7 Pages	0.7A,100V,1.200Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
IRFD9110	文件：54.38 Kbytes Page：6 Pages	0.7A,100V,1.200Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching	Intersil Intersil Corporation	Intersil
IRFD9110	文件：173.36 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-100V,Rds(on)=1.2ohm,Id=-0.70A) HEXFETtechnologyisthekeytoInternationalRectififersadvancedlineofpowerMOSFETtransistors. ■P-ChannelVersatility ■ForAutomaticInsertion ■CompactPlasticPackage ■EndStackable ■FastSwitching ■LowDriveCurrent ■EasilyParalleled ■ExcellentTemperatureStability	IRF International Rectifier	IRF
IRFD9110	文件：1.52087 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFD9110	文件：1.64972 Mbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFD9110	文件：825.31 Kbytes Page：9 Pages	PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Forautomaticinsertion •Endstackable •P-channel •Fastswitching •175°Coperatingtemperature •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFD9110PBF	文件：1.79065 Mbytes Page：8 Pages	HEXFETPOWERMOSFET(VDSS=-100V,RDS(on)=1.2廓,ID=-0.70A)	IRF International Rectifier	IRF
IRFD9110PBF	文件：1.52087 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半导体	Vishay

详细参数

型号：
IRFC9110
制造商：
Vishay Semiconductors
功能描述：
MOSFET P-CHANNEL 100V - Tape and Reel

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	IRFC9110R	IR	22+		6000	终端可免费供样,支持BOM配单	询价
深圳市安富世纪电子有限公司	IRFC9110R	IR	23+		8000	只做原装现货	询价
天津市博通航睿技术有限公司	IRFC9110R	IR	23+		7000		询价
深圳市振宏微科技有限公司	IRFC9130	IR	23+	SMD	9888	专做原装正品,假一罚百!	询价
深圳市威雅利发展有限公司	IRFC9140	IR	1244+	裸片	1066	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市赛尔通科技有限公司	IRFCM2400		23+		65480		询价

更多IRFC9110供应商更新时间2025-5-16 14:00:00

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