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IRFD9010

Power MOSFET

DESCRIPTION The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness. FEATURES • For Automatic

文件:134.89 Kbytes 页数:7 Pages

VishayVishay Siliconix

威世威世科技公司

IRFD9010

HEXFET짰 TRANSISTORS P-CHANNEL HEXDIP?

HEXFET® TRANSISTORS P-CHANNEL HEXDIP™ 1-WATT TRATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE FEATURES ■ For Automatic Insertion ■ Compact, End Stackable ■ Fast Switching ■ Low Drive Current ■ Easy Paralleled ■ Excellent Temperature Stability ■ P-Channel Versatility

文件:453.91 Kbytes 页数:6 Pages

IRF

IRFD9010

Power MOSFET

• For Automatic Insertion\n• Compact, End Stackable\n• Fast Switching;

Vishay

威世

IRFD9010

HEXFET® TRANSISTORS P-CHANNEL HEXDIP™

Infineon

英飞凌

详细参数

  • 型号:

    IRFD9010

  • 功能描述:

    MOSFET P-Chan 50V 1.1 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INTERNATIONA
05+
原厂原装
4915
只做全新原装真实现货供应
询价
IR
25+
PLCC44
18000
原厂直接发货进口原装
询价
IR
24+
HD-1
5000
询价
IR
23+
DIP
5000
原装正品,假一罚十
询价
VISHAY
25+
DIP-4
1675
就找我吧!--邀您体验愉快问购元件!
询价
IR
21+
DIP-4
10000
原装现货假一罚十
询价
Vishay Siliconix
22+
4DIP
9000
原厂渠道,现货配单
询价
IR
25+
20
公司优势库存 热卖中!!
询价
IR
23+
DIP-4
91763
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IR
22+
HD-1
8000
原装正品支持实单
询价
更多IRFD9010供应商 更新时间2025-12-1 10:36:00