1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs

Description These are advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regul

文件：360.08 Kbytes 页数：6 Pages

HARRIS

N-Channel Enhancement-Mode Power MOS Field-Effect Transistors

5.0A and 6.0A, 60V-100V rDS(0n) = 0.30Ω and 0.40Ω Features: ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

文件：165.85 Kbytes 页数：5 Pages

GESS

isc Silicon NPN Darlington Power Transistor

文件：251.33 Kbytes 页数：2 Pages

ISC

无锡固电

isc Thyristors

文件：222.07 Kbytes 页数：2 Pages

ISC

无锡固电