N-Channel Enhancement-Mode Power MOS Field-Effect Transistors

5.0A and 6.0A, 60V-100V rDS(0n) = 0.30Ω and 0.40Ω Features: ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

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GESS

COMPLEMENTARY SILICON POWER DARLINGTONS

Complementary Power Darlingtons For Isolated Package Applications Designed for general–purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. • Electrically Similar to the Popular TIP122 and T

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MOTOROLA

摩托罗拉

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

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MOTOROLA

摩托罗拉

POWER TRANSISTORS(5.0A,60-100V,65W)

designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

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MOSPEC

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