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MJD122

Complementary Darlington Power Transistors

Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127

文件:137.52 Kbytes 页数:8 Pages

Fairchild

仙童半导体

MJD122

Complementary Darlington Power Transistors

Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127

文件:284.04 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MJD122

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Speed Switching Applications

文件:408.73 Kbytes 页数:5 Pages

CDIL

MJD122

Silicon NPN epitaxial planer Transistors

Features • High DC Current Gain • Built-in a Damper Diode at E-C • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Infor

文件:277.83 Kbytes 页数:3 Pages

MCC

MJD122

NPN PLASTIC ENCAPSULATE TRANSISTORS

Features: * High DC current gain * Electrically similar to popular TIP122 * Built-in a damper diode at E-C

文件:683.2 Kbytes 页数:4 Pages

WEITRON

MJD122

TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

Description Designed for use in general purpose amplifier and low speed switching applications.

文件:244.33 Kbytes 页数:1 Pages

DCCOM

道全

MJD122

isc Silicon NPN Darlington Power Transistor

DESCRIPTION · Low Collector-Emitter saturation voltage · Lead formed for surface mount applications · High DC current gain · 100 avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for general purpose amplifier and lo

文件:246.92 Kbytes 页数:2 Pages

ISC

无锡固电

MJD122

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

文件:284.04 Kbytes 页数:8 Pages

Motorola

摩托罗拉

MJD122

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

文件:296.14 Kbytes 页数:2 Pages

ISC

无锡固电

MJD122

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

文件:277.2 Kbytes 页数:2 Pages

ISC

无锡固电

技术参数

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Polarity:

    NPN

  • IC Continuous (A):

    8

  • V(BR)CEO Min (V):

    100

  • VCE(sat) Max (V):

    2

  • hFE Min (k):

    1

  • hFE Max (k):

    12

  • fT Min (MHz):

    4

  • Package Type:

    DPAK-3

供应商型号品牌批号封装库存备注价格
FSC
19+
TO-252
58000
询价
CJ/长电
25+
TO-251-3L
20300
CJ/长电原装特价MJD122即刻询购立享优惠#长期有货
询价
CJ
20+
TO-252
30000
全新原装公司现货
询价
CJ(江苏长电/长晶)
22+
TO-252-2(DPAK)
10000
只做原装,公司现货,提供一站式BO
询价
CJ
23+
TO252
52500
原厂原装正品
询价
CJ/长电
2021+
TO-252
9000
原装现货,随时欢迎询价
询价
CJ/长晶
24+
TO-252
29785
只做全新原装进口现货
询价
CJ(江苏长电/长晶)
24+
TO-251(I-PAK)
8008
原厂可订货,技术支持,直接渠道。可签保供合同
询价
CJ
2450+
TO252
9850
只做原装正品现货或订货假一赔十!
询价
ON
1215+
TO-252
150000
全新原装,绝对正品,公司大量现货供应.
询价
更多MJD122供应商 更新时间2025-12-13 16:03:00