| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MJD122 | Complementary Darlington Power Transistors Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127 文件:137.52 Kbytes 页数:8 Pages | Fairchild 仙童半导体 | Fairchild | |
MJD122 | Complementary Darlington Power Transistors Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127 文件:284.04 Kbytes 页数:8 Pages | ONSEMI 安森美半导体 | ONSEMI | |
MJD122 | COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Designed for General Purpose Amplifier and Low Speed Switching Applications 文件:408.73 Kbytes 页数:5 Pages | CDIL | CDIL | |
MJD122 | Silicon NPN epitaxial planer Transistors Features • High DC Current Gain • Built-in a Damper Diode at E-C • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Infor 文件:277.83 Kbytes 页数:3 Pages | MCC | MCC | |
MJD122 | NPN PLASTIC ENCAPSULATE TRANSISTORS Features: * High DC current gain * Electrically similar to popular TIP122 * Built-in a damper diode at E-C 文件:683.2 Kbytes 页数:4 Pages | WEITRON | WEITRON | |
MJD122 | TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. 文件:244.33 Kbytes 页数:1 Pages | DCCOM 道全 | DCCOM | |
MJD122 | isc Silicon NPN Darlington Power Transistor DESCRIPTION · Low Collector-Emitter saturation voltage · Lead formed for surface mount applications · High DC current gain · 100 avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for general purpose amplifier and lo 文件:246.92 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
MJD122 | SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur 文件:284.04 Kbytes 页数:8 Pages | Motorola 摩托罗拉 | Motorola | |
MJD122 | Silicon NPN Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. 文件:296.14 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
MJD122 | Silicon NPN Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. 文件:277.2 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC |
技术参数
- Pb-free:
Pb
- AEC Qualified:
A
- Halide free:
H
- PPAP Capablee:
P
- Status:
Active
- Polarity:
NPN
- IC Continuous (A):
8
- V(BR)CEO Min (V):
100
- VCE(sat) Max (V):
2
- hFE Min (k):
1
- hFE Max (k):
12
- fT Min (MHz):
4
- Package Type:
DPAK-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
19+ |
TO-252 |
58000 |
询价 | |||
CJ/长电 |
25+ |
TO-251-3L |
20300 |
CJ/长电原装特价MJD122即刻询购立享优惠#长期有货 |
询价 | ||
CJ |
20+ |
TO-252 |
30000 |
全新原装公司现货
|
询价 | ||
CJ(江苏长电/长晶) |
22+ |
TO-252-2(DPAK) |
10000 |
只做原装,公司现货,提供一站式BO |
询价 | ||
CJ |
23+ |
TO252 |
52500 |
原厂原装正品 |
询价 | ||
CJ/长电 |
2021+ |
TO-252 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
CJ/长晶 |
24+ |
TO-252 |
29785 |
只做全新原装进口现货 |
询价 | ||
CJ(江苏长电/长晶) |
24+ |
TO-251(I-PAK) |
8008 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
CJ |
2450+ |
TO252 |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
ON |
1215+ |
TO-252 |
150000 |
全新原装,绝对正品,公司大量现货供应. |
询价 |
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