Complementary Darlington Power Transistor

文件：87.53 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Complementary Darlington Power Transistor

文件：106.5 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

互补硅功率达林顿晶体管

The devices are manufactured in planar technology with \\\"base island\\\" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. • Low collector-emitter saturation voltage \n• Integrated antiparallel collector-emitter diode;

ST

意法半导体

中等功率双极型晶体管

MCC

美微科

达林顿管

JSCJ

长晶科技

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

文件：91.56 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

文件：91.56 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

文件：284.04 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

文件：296.14 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

文件：277.2 Kbytes 页数：2 Pages

ISC

无锡固电