MJD122-1

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionAvailablein16mmTapeandReel(“T4”Suffix) •Sur

MJD122-1

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET

MJD122-1

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET

MJD122-1

Package：TO-251-3 短引线，IPak，TO-251AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 100V 8A TO251

MJD122-1G

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 100V 8A DPAK

BD122-1

LowCapacitanceandInsertionLoss

DC-122-1

1WATTSINGLEOUTPUTDC-DCCONVERTERS

LN122-1

LNseriescommonmodechoke