Low voltage PNP power transistor

DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX

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STMICROELECTRONICS

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Complementary Power Transistors

文件：81.61 Kbytes 页数：8 Pages

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Complementary Power Transistors

文件：135.34 Kbytes 页数：10 Pages

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Low voltage PNP power transistor

The device is manufactured in planar technology with a “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. • Surface-mounting TO-252 power package in tape and reel \n• Complementary to the NPN type MJD31CT4;

ST

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Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 3A DPAK

STMICROELECTRONICS

意法半导体

Low voltage PNP power transistor

Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ This device is qualified for automotive application ■ Surface-mounting TO-252 power packa

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STMICROELECTRONICS

意法半导体

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi

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安森美半导体

Complementary Power Transistors

文件：100.84 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Complementary Power Transistors

文件：135.34 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Complementary Power Transistors

文件：81.61 Kbytes 页数：8 Pages

ONSEMI

安森美半导体