1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET

1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs

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INTERSIL

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-205AF)

The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high transconductance. The HEXFET transistors also fea

文件：129.419 Kbytes 页数：7 Pages

IRF

1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET

1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel MOSFET in a Hermetically sealed TO39

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SEME-LAB

1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET

Renesas

瑞萨

Power MOSFET field effect power transistor. Drain-source voltage 400 V.

GESS

MOSFETs and JFETs

TT Electronics