Power MOSFET

VDS (V) 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

文件：1.06558 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene

文件：413.4 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=0.32A)

VDSS = 600V RDS(on) = 4.4Ω ID = 0.32A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca

文件：464.77 Kbytes 页数：8 Pages

IRF

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene

文件：413.4 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

VDS (V) 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

文件：1.06558 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：413.4 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=0.32A)

Infineon

英飞凌