IRFDC20中文资料PDF规格书
IRFDC20规格书详情
VDS (V) 600
RDS(on) (Ω) VGS = 10 V 4.4
Qg (Max.) (nC) 18
Qgs (nC) 3.0
Qgd (nC) 8.9
Configuration Single
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
产品属性
- 型号：
IRFDC20
- 功能描述：
MOSFET N-Chan 600V 0.32 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILICONIXVISHAY |
21+ |
NA |
7500 |
只做原装,一定有货,不止网上数量,量多可订货! |
询价 | ||
IR |
23+ |
LCC |
66800 |
原装正品专营军工 |
询价 | ||
Vishay Siliconix |
21+ |
4DIP |
13880 |
公司只售原装,支持实单 |
询价 | ||
Vishay Siliconix |
23+ |
4DIP |
9000 |
原装正品，支持实单 |
询价 | ||
CHINA |
22+ |
LCC-18 |
640 |
航宇科工半导体-央企合格优秀供方! |
询价 | ||
IR |
18 |
LCC |
200 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
IR |
QQ咨询 |
LCC |
63 |
全新原装 研究所指定供货商 |
询价 | ||
VishayIR |
07+/08+ |
4-DIP |
1600 |
询价 | |||
Vishay |
NEW- |
MOSFETs |
100000 |
IRFDC20PBF Vishay MOSFETs Transistor N-CH 600V 0.3 |
询价 | ||
VISHAY-威世 |
24+25+/26+27+ |
DIP-4.直插 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
