IRFD9120中文资料PDF规格书
IRFD9120规格书详情
This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
• 1.0A, 100V
• rDS(ON) = 0.6Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
产品属性
- 型号：
IRFD9120
- 功能描述：
MOSFET P-Chan 100V 1.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VS |
22+ |
DIP |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 | ||
IR/INFINEON |
24+23+ |
DIP-4 |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
23+ |
N/A |
49000 |
正品授权货源可靠 |
询价 | |||
HARRIS |
92/93 |
DIP |
9500 |
原装现货海量库存欢迎咨询 |
询价 | ||
HARRIS/MOT |
23+ |
NA/ |
5171 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
SILICONIX |
2023+ |
DIP-4 |
16800 |
芯为只有原装 |
询价 | ||
IR |
DIP4 |
9500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
SIL |
2021+ |
DIP-4 |
6800 |
原厂原装,欢迎咨询 |
询价 | ||
IR |
2020+ |
HEXDIP |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
Vishay Siliconix |
22+ |
4DIP |
9000 |
原厂渠道,现货配单 |
询价 |
