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IRFDC20PBF中文资料威世科技数据手册PDF规格书
IRFDC20PBF规格书详情
VDS (V) 600
RDS(on) (Ω) VGS = 10 V 4.4
Qg (Max.) (nC) 18
Qgs (nC) 3.0
Qgd (nC) 8.9
Configuration Single
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
产品属性
- 型号：
IRFDC20PBF
- 功能描述：
MOSFET N-Chan 600V 0.32 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
三年内 |
1983 |
只做原装正品 |
询价 | |||
IR |
24+ |
SMD |
50 |
“芯达集团”专营军工百分之百原装进口 |
询价 | ||
IR |
专业军工 |
NA |
1000 |
只做原装正品军工级部分订货 |
询价 | ||
IR |
QQ咨询 |
LCC |
63 |
全新原装 研究所指定供货商 |
询价 | ||
VishayIR |
24+ |
4-DIP |
2203 |
询价 | |||
INTERNATIONA |
05+ |
原厂原装 |
4241 |
只做全新原装真实现货供应 |
询价 | ||
VISHAY(威世) |
24+ |
HVMDIP-4 |
9555 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
VishayPCS |
新 |
878 |
全新原装 货期两周 |
询价 | |||
24+ |
长期备有现货 |
500000 |
行业低价,代理渠道 |
询价 | |||
23+ |
65480 |
询价 |
