IRFE024

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS SURFACE MOUNT (LCC-18)

Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRe

IRFE024

Simple Drive Requirements

IRFE024

N-CHANNEL POWER MOSFET

IRFE024_15

Simple Drive Requirements

IRFF024

60V,N-CHANNEL

TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsof

IRFF024

N-ChannelMOSFETinaHermeticallysealedTO39

IRFL024

PowerMOSFET(Vdss=55V,Rds(on)=0.075ohm,Id=2.8A)

VDSS=55V RDS(on)=0.075Ω ID=2.8A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRFL024N

PowerMOSFET(Vdss=55V,Rds(on)=0.075ohm,Id=2.8A)

VDSS=55V RDS(on)=0.075Ω ID=2.8A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRFL024N

AdvancedProcessTechnology

IRFL024N

SurfaceMount