POWER-MOSFET FIELD EFFECT POWER TRANSISTOR

POWER-MOSFET FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFET utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switchi

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GESS

Power MOSFET field effect power transistor.

GESS

Power MOS Field-Effect Transistors

N-Channel Enhancement-Mode Power Field-Effect Transistors Features • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority carrier device

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GESS

IM-CHANIMEL POWER MOSFETs TO-39 PACKAGE

The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, freedom from second breakdown, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. They are well suited for applications such as switching D

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

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IRF