首页 >IRFD9024PBF>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IRFD9024PBF | HEXFET Power MOSFET Vdss=-60V Rds(on)=0.28Ω Id=-1.6A *Lead-Free | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
INSULATEDPCSPACERS/SUPPORTS INSULATEDPCSPACERS/SUPPORTS •Boardwillbeelectricallyinsulated,eliminatesneedforinsulatingwashers •Easysnap-inassembly •Notoolrequiredforinstallation •Designedfor.062(1.57)thickboards •Onepiecedesigneliminatestheneedforadditionalscrewsandnuts •Slimdesig | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
MilitaryManaged24-Port1GEthernetRouter/Switch FEATURESDESCRIPTION EthernetisbecomingthestandardforIP-based componentsinmilitaryandcommercialapplications onland,seaandairplatforms. TheMILTECH9024isspecificallydesignedfor battlefieldC4ISR,voice,video,sensordataacquisition andcommunicationsinplatformsthatha | ENERCON Enercon Technologies Europe AG | |||
SnapRivets | Heyco Heyco | |||
SnapRivets | Heyco Heyco | |||
Cooper-WheelockAS/AHSerles | GAMEWELL-FCIGamewell-FCI by Honeywell Gamewell-FCI by Honeywell | |||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SAWComponentsLow-LossFilterforMobileCommunication942,5MHz Features ■Low-lossRFfilterformobiletelephoneEGSMsystem,receivepath ■Usablepassband35MHz ■Unbalancedoperation ■Impedance50Ωinputandoutput ■CeramicPackageforSurfaceMountedTechnology(SMT) | EPCOSEPCOS - TDK Electronics 爱普科斯爱普科斯与TDK元件事业部 | |||
15C20AWG7/28TCPVC/PVC | GENERALGeneral Electric 通用电气公司美国通用电气公司 | |||
DA9024Quad1.2ABuckPMICwithAudioDrivers | Dialog Dialog | |||
GENLINX-TMIIEB9024EvaluationBoard | GennumGennum Corporation 根努姆公司 | |||
SAWBandpassFilter | ITFIntegrated Technology Future Integrated Technology Future | |||
P-ChannelMOSFET | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |
详细参数
- 型号:
IRFD9024PBF
- 功能描述:
MOSFET P-Chan 60V 1.6 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Vishay Siliconix |
23+ |
4-HVMDIP |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
VISHAY/威世 |
21+ |
NA |
5000 |
只做原装,假一罚十 |
询价 | ||
VISHAY |
21+ |
HVMDIP-4 (HEXDIP-4) |
2100 |
原装正品 有挂有货 |
询价 | ||
VISHAY |
21+ |
1900 |
HVMDIP-4 (HEXDIP-4) |
询价 | |||
VISHAY(威世) |
23+ |
HVMDIP-4 |
7863 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
IR |
23+ |
1018 |
HEXDIP |
询价 | |||
IR |
23+ |
HEXDIP |
19526 |
询价 | |||
IR |
2016+ |
DIP4 |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
VISHAY |
23+ |
IPak |
7750 |
全新原装优势 |
询价 | ||
IR |
DIP-4 |
7563 |
提供BOM表配单只做原装货值得信赖 |
询价 |
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