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IRFD014

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat

文件:2.58557 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世科技

IRFD014

Power MOSFET

FEATURES • Dynamic dV/dt rating • For automatic insertion • End stackable • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third ge

文件:868.89 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世科技

IRFD014

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=1.7A)

文件:171.17 Kbytes 页数:6 Pages

IRF

IRFD014

Power MOSFET

文件:2.02521 Mbytes 页数:9 Pages

VishayVishay Siliconix

威世科技

IRFD014

Power MOSFET

文件:2.02521 Mbytes 页数:9 Pages

VishayVishay Siliconix

威世科技

IRFD014

Power MOSFET

• Dynamic dV/dt rating\n• For automatic insertion\n• End stackable;

Vishay

威世科技

IRFD014

HEXFET Power MOSFET

Infineon

英飞凌

IRFD014_V01

Power MOSFET

FEATURES • Dynamic dV/dt rating • For automatic insertion • End stackable • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third ge

文件:868.89 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世科技

IRFD014PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat

文件:2.58557 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世科技

IRFD014_10

Power MOSFET

文件:2.02521 Mbytes 页数:9 Pages

VishayVishay Siliconix

威世科技

详细参数

  • 型号:

    IRFD014

  • 功能描述:

    MOSFET N-Chan 60V 1.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
25+
PLCC44
18000
原厂直接发货进口原装
询价
24+
DIP-4
320
询价
IR
23+
DIP-4
5000
原装正品,假一罚十
询价
IR
25+
DIP-4
1000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
24+
原厂封装
1144
原装现货假一罚十
询价
IR
18+
DIP4
85600
保证进口原装可开17%增值税发票
询价
NA
SSOP
1008
优势库存
询价
IR
23+
65480
询价
IR
23+
DIP
30000
代理全新原装现货,价格优势
询价
IR
23+
10000
全新原装正品现货
询价
更多IRFD014供应商 更新时间2025-10-3 16:17:00