0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS

These are advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching

文件：360.56 Kbytes 页数：6 Pages

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Voltage Comparator

文件：1.08989 Mbytes 页数：23 Pages

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Voltage Comparator

文件：1.08989 Mbytes 页数：23 Pages

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C-MOS QUAD SPST ANALOG SWITCH

文件：156.78 Kbytes 页数：4 Pages

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