60V, N-CHANNEL

The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET transistors also f

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IRF

N-Channel MOSFET in a Hermetically sealed TO39

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SEME-LAB

Seme LAB

Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A)

VDSS = 55V RDS(on) = 0.075Ω ID = 2.8A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

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IRF

Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A)

VDSS = 55V RDS(on) = 0.075Ω ID = 2.8A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

文件：110.16 Kbytes 页数：8 Pages

IRF

Advanced Process Technology

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IRF