IRFF024

60V, N-CHANNEL

TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsof

IRFF024

N-Channel MOSFET in a Hermetically sealed TO39

IRFL024

PowerMOSFET(Vdss=55V,Rds(on)=0.075ohm,Id=2.8A)

VDSS=55V RDS(on)=0.075Ω ID=2.8A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRFL024N

PowerMOSFET(Vdss=55V,Rds(on)=0.075ohm,Id=2.8A)

VDSS=55V RDS(on)=0.075Ω ID=2.8A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRFL024N

AdvancedProcessTechnology

IRFL024N

SurfaceMount

IRFL024NPBF

HEXFET짰PowerMOSFET

VDSS=55V RDS(on)=57.5mΩ ID=5.1A Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFL024NPBF

AdvancedProcessTechnology

IRFL024NTR

SurfaceMount

IRFL024NTRPBF

AdvancedProcessTechnology