Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A)

VDSS = 55V RDS(on) = 0.075Ω ID = 2.8A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

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IRF

Advanced Process Technology

文件：115.72 Kbytes 页数：8 Pages

IRF

Surface Mount

文件：115.72 Kbytes 页数：8 Pages

IRF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 57.5mΩ ID = 5.1A Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and impro

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IRF

Advanced Process Technology

文件：140.38 Kbytes 页数：8 Pages

IRF

Advanced Process Technology

文件：140.38 Kbytes 页数：8 Pages

IRF

Surface Mount

文件：115.72 Kbytes 页数：8 Pages

IRF

Advanced Process Technology

文件：115.72 Kbytes 页数：8 Pages

IRF

55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package

\n优势:\n• RoHS Compliant\n• Low RDS(on)\n• Industry-leading quality\n• Dynamic dv/dt Rating\n• Fast Switching\n• Fully Avalanche Rated\n• 175°C Operating Temperature;

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