AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件：303.57 Kbytes 页数：12 Pages

IRF

Advanced Process Technology Ultra Low On-Resistance

文件：5.0983 Mbytes 页数：12 Pages

KERSEMI

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件：370.99 Kbytes 页数：13 Pages

IRF

Advanced Process Technology

文件：385.59 Kbytes 页数：12 Pages

IRF

采用 TO-262 封装的 55V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度;

Infineon

英飞凌