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IRF3205STRLPBF

Advanced Process Technology

文件:286.48 Kbytes 页数:11 Pages

IRF

IRF3205STRLPBF

丝印:D2PAK;Package:TO-263;isc N-Channel MOSFET Transistor

文件:266.96 Kbytes 页数:2 Pages

ISC

无锡固电

IRF3205STRR

Advanced Process Technology

文件:618.88 Kbytes 页数:11 Pages

IRF

IRF3205VPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件:939.9 Kbytes 页数:8 Pages

IRF

IRF3205Z

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件:303.57 Kbytes 页数:12 Pages

IRF

详细参数

  • 型号:

    IRF3205STRL

  • 功能描述:

    MOSFET MOSFT 55V 110A 8mOhm 97.3nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
24+
TO-263
9443
保证进口原装现货假一赔十
询价
IR
25+
TO-263
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
2020+
TO-263
22000
全新原装正品 现货库存 价格优势
询价
Infineon
23+
N/A
10000
原装现货热卖库存
询价
INFINEON/IR
1907+
NA
2400
20年老字号,原装优势长期供货
询价
INFINEON
22+
D2PAK
40000
原装正品可支持验货,欢迎咨询
询价
INFINEON
22+
sot
6600
正品渠道现货,终端可提供BOM表配单。
询价
INFINEON/英飞凌
25+
TO-263
32360
INFINEON/英飞凌全新特价IRF3205STRLPBF即刻询购立享优惠#长期有货
询价
IR
24+
TO-220
15000
全新原装的现货
询价
IR
15+
原厂原装
8800
进口原装现货假一赔十
询价
更多IRF3205STRL供应商 更新时间2025-10-6 12:09:00