IRF250SMD

N.CHANNELPOWERMOSFET

FEATURES •HERMETICALLYSEALEDSURFACEMOUNTPACKAGE •SMALLFOOTPRINT–EFFICIENTUSEOFPCBSPACE. •SIMPLEDRIVEREQUIREMENTS •LIGHTWEIGHT •HIGHPACKINGDENSITIES

IRFC250

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert

IRFM250

N-CHANNELPOWERMOSFET

IRFM250

POWERMOSFETTHRU-HOLE(TO-254AA)

PartNumberRDS(on)ID IRFM2500.100Ω27.4A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductan

IRFM250

N?밅HANNELPOWERMOSFET

IRFM250

SimpleDriveRequirements

IRFM250

POWERMOSFETTHRU-HOLE(TO-254AA)

IRFM250D

N–CHANNELPOWERMOSFET

VDSS200V ID(cont)27.4A RDS(on)0.100Ω FEATURES •N–CHANNELMOSFET •HIGHVOLTAGE •INTEGRALPROTECTIONDIODE •HERMETICISOLATEDTO-254PACKAGE •CERAMICSURFACEMOUNTPACKAGE OPTION

IRFN250

POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=0.100ohm,Id=27.4A)

RDS(on)0.100Ω ID27.4A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-estab

IRFN250

N?밅HANNELPOWERMOSFET

FEATURES •HERMETICALLYSEALEDSURFACEMOUNTPACKAGE •SMALLFOOTPRINT–EFFICIENTUSEOFPCBSPACE. •SIMPLEDRIVEREQUIREMENTS •LIGHTWEIGHT •HIGHPACKINGDENSITIES