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IRF2807Z

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件:272.67 Kbytes 页数:12 Pages

IRF

IRF2807Z

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件:4.64052 Mbytes 页数:12 Pages

KERSEMI

IRF2807Z

N-Channel MOSFET Transistor

文件:340.21 Kbytes 页数:2 Pages

ISC

无锡固电

IRF2807Z

Advanced Process Technology

文件:279.61 Kbytes 页数:13 Pages

IRF

IRF2807ZL

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件:272.67 Kbytes 页数:12 Pages

IRF

IRF2807ZL

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件:4.64052 Mbytes 页数:12 Pages

KERSEMI

IRF2807ZLPBF

AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

文件:279.79 Kbytes 页数:12 Pages

IRF

IRF2807ZPBF

AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

文件:279.79 Kbytes 页数:12 Pages

IRF

IRF2807ZS

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件:272.67 Kbytes 页数:12 Pages

IRF

IRF2807ZS

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件:4.64052 Mbytes 页数:12 Pages

KERSEMI

技术参数

  • OPN:

    IRF2807ZPBF

  • Qualification:

    Non-Automotive

  • Package name:

    TO220

  • VDS max:

    75 V

  • RDS (on) @10V max:

    9.4 mΩ

  • ID @25°C max:

    89 A

  • QG typ @10V:

    71 nC

  • Polarity:

    N

  • VGS(th) min:

    2 V

  • VGS(th) max:

    4 V

  • VGS(th):

    3 V

  • Technology:

    IR MOSFET™

供应商型号品牌批号封装库存备注价格
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
24+
TO-220AB
8866
询价
IR
24+
原厂封装
2000
原装现货假一罚十
询价
IR
2015+
TO-220AB
12500
全新原装,现货库存长期供应
询价
IR
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR
18+
TO-220
41200
原装正品,现货特价
询价
IR
20+
TO-220
38900
原装优势主营型号-可开原型号增税票
询价
IR
23+
TO-220AB
50000
全新原装正品现货,支持订货
询价
INFINEON
25+
TO-220
3000
就找我吧!--邀您体验愉快问购元件!
询价
Infineon
22+
NA
2118
加我QQ或微信咨询更多详细信息,
询价
更多IRF2807Z供应商 更新时间2025-10-4 13:00:00