N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High voltage)

文件：215.26 Kbytes 页数：5 Pages

Samsung

三星

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert

文件：49.56 Kbytes 页数：1 Pages

IXYS

艾赛斯

Nanosecond Switching Speed

DESCRIPTION • Drain Current ID=25A@ TC=25℃ • Drain Source Voltage : VDSS= 200V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.12Ω(Max) • Nanosecond Switching Speed APPLICATIONS • Switching power supplies • Switching converters,motor driver,relay driver

文件：48.25 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNE POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

文件：136.22 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

文件：137.76 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans MOSFET 200V 25A 3-Pin(2+Tab) TO-3

NJS

Legacy Power Discretes & Modules

Microchip

微芯科技

Trans MOSFET 200V 25A 3-Pin(2+Tab) TO-3

NJS